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参数资料
| 型号： | IXTP182N055T |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 182A TO-220 |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 182A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 114nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4850pF @ 25V |
| 功率 - 最大： | 360W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IXTA182N055T
IXTP182N055T
Symbol
Test Conditions
Characteristic Values
TO-263AA (IXTA) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 10 V; I D =60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 30 V, I D = 25 A
65
100
4850
954
212
36
35
S
pF
pF
pF
ns
ns
t d(off)
t f
R G = 5 ? (External)
53
38
ns
ns
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
114
30
32
nC
nC
nC
Dim.
A
A1
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
Inches
Min. Max.
.160 .190
.080 .110
R thJC
R thCS
TO-220
0.50
0.42 ° C/W
° C/W
b
b2
c
c2
D
0.51
1.14
0.46
1.14
8.64
0.99
1.40
0.74
1.40
9.65
.020
.045
.018
.045
.340
.039
.055
.029
.055
.380
D1
E
7.11
9.65
8.13
10.29
.280
.380
.320
.405
Source-Drain Diode
E1
e
6.86
2.54
8.13
BSC
.270
.100
.320
BSC
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
L
L1
L2
14.61
2.29
1.02
15.88
2.79
1.40
.575
.090
.040
.625
.110
.055
I S
V GS = 0 V
182
A
L3
L4
R
1.27
0
0.46
1.78
0.38
0.74
.050
0
.018
.070
.015
.029
I SM
Pulse width limited by T JM
490
A
V SD
t rr
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
70
1.0
V
ns
TO-220AB (IXTP) Outline
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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