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| 型号： | IXTP7N60PM |
| 厂商： | IXYS |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 4A TO-220 |
| 标准包装： | 50 |
| 系列： | Polar™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1180pF @ 25V |
| 功率 - 最大： | 41W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IXTA7N60PM
IXTP7N60PM
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
ISOLATED TO-220 (I XTP...M )
g fs
C iss
C oss
V DS = 10V, I D = 3.5A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
4
7
1180
110
S
pF
pF
C rss
t d(on)
t r
t d(off)
Resistive Swithcing Times
V GS = 10V, V DS = 0.5
V DSS , I D = 7A
R G = 18 Ω (External)
11
20
27
65
pF
ns
ns
ns
1
2
3
t f
Q g(on)
26
20
ns
nC
Q gs
Q gd
R thJC
V GS = 10V, V DS = 0.5
V DSS , I D = 3.5A
7
7
nC
nC
3.0 ° C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 7A, -di/dt = 100A/ μ s,
V R = 100V, V GS = 0V
500
7
28
1.5
A
A
V
ns
Notes:1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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