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| 型号： | IXTQ96N25T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 96A TO-3P |
| 标准包装： | 30 |
| 系列： | TrenchHV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 96A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 29 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 114nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6100pF @ 25V |
| 功率 - 最大： | 625W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3P |
| 包装： | 管件 |
IXTH96N25T IXTQ96N25T
IXTV96N25T
Symbol
Test Conditions
Characteristic Values
TO-247AD Outline
(T J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
50
82
6100
S
pF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
625
pF
1
2
3
C rss
t d(on)
75
20
pF
ns
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2.5 Ω (External)
22
59
28
ns
ns
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Q g(on)
114
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A 1
A 2
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
33
34
nC
nC
A 4.7 5.3
2.2 2.54
2.2 2.6
.185 .209
.087 .102
.059 .098
b 1.0 1.4
.040 .055
b 1
b 2
R thJC
R thCS
0.25
0.20 °C/W
°C/W
1.65 2.13
2.87 3.12
C .4 .8
.065 .084
.113 .123
.016 .031
D 20.80 21.46
.819 .845
Source-Drain Diode
E 15.75 16.26
e 5.20 5.72
.610 .640
0.205 0.225
Symbol Test Conditions
T J = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
L 19.81 20.32
L1 4.50
?P 3.55 3.65
.780 .800
.177
.140 .144
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
96
300
A
A
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
0.232 0.252
.170 .216
242 BSC
V SD
t rr
I RM
Q RM
I F = I S , V GS = 0V, Note 1
I F = 48A, -di/dt = 250 A/ μ s
V R = 100 V,V GS = 0V
158
23
1.8
1.5
V
ns
A
μ C
TO-3P (IXTQ) Outline
Notes: 1. Pulse test, t ≤ 300 m s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact location must be
5 mm or less from the package body.
PLUS220 (IXTV) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins: 1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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