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| 型号： | IXTR36P15P |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 150V 22A ISOPLUS247 |
| 标准包装： | 30 |
| 系列： | PolarP™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 22A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 55nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2950pF @ 25V |
| 功率 - 最大： | 150W |
| 安装类型： | 通孔 |
| 封装/外壳： | ISOPLUS247? |
| 供应商设备封装： | ISOPLUS247? |
| 包装： | 管件 |
IXTC36P15P
IXTR36P15P
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS220 TM Outline
g fs
C iss
C oss
C rss
V DS = -10V, I D = -18A, Note 1
V GS = 0V, V DS = - 25V, f = 1MHz
11
19
2950
615
115
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
Resistive Switching Times
V GS = -10V, V DS = 0.5 ? V DSS , I D = -18A
R G = 5 Ω (External)
V GS = -10V, V DS = 0.5 ? V DSS , I D = -18A
28
37
45
14
55
21
20
ns
ns
ns
ns
nC
nC
nC
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
R thJC
1.00 ° C/W
R thCS
Source-Drain Diode
0.15
° C/W
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = -18A, V GS = 0V, Note 1
I F = - 25, -di/dt = -100A/ μ s
V R = -100V, V GS = 0V
150
2.0
- 36
-100
- 3.0
A
A
V
ns
μ C
Ref: IXYS CO 0177 R0
ISOPLUS 247 TM Outline
Note
1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
R
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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