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参数资料
| 型号： | IXTT30N60L2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30A 600V TO-268 |
| 产品目录绘图： | TO-268 Package |
| 标准包装： | 30 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 240 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 335nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 10700pF @ 25V |
| 功率 - 最大： | 540W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-268-3，D³Pak（2 引线+接片），TO-268AA |
| 供应商设备封装： | TO-268 |
| 包装： | 管件 |
IXTH30N60L2 IXTQ30N60L2
IXTT30N60L2
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
10
14
18
S
C iss
10.7
nF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
600
pF
1
2
3
? P
C rss
130
pF
t d(on)
Resistive Switching Times
43
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
65
123
43
335
58
212
ns
ns
ns
nC
nC
nC
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
R thCS
R thJC
(TO-247&TO-3P)
Safe Operating Area Specification
0.25
0.23 ° C/W
° C/W
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
Symbol
SOA
Test Conditions
V DS = 480V, I D = 0.6A, T C = 75°C, t p = 3s
Min.
288
Typ.
Max.
W
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.819 .845
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
Symbol
Test Conditions
Min. Typ. Max.
R 4.32 5.49
.170 .216
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = I S , -di/dt = 100A/ μ s, V R = 100V
710
30
120
1.5
A
A
V
ns
S 6.15 BSC
TO-3P (IXTQ) Outline
242 BSC
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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