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| 型号： | J310RLRP |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 66K |
| 描述： | MOSFET VHF/UHF N-CH 25V TO-92 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 2,000 |
| 晶体管类型： | N 通道 JFET |
| 频率： | 100MHz |
| 增益： | 16dB |
| 电压 - 测试： | 10V |
| 额定电流： | 60mA |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 25V |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 带卷 (TR) |
J309, J310
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate?Source Breakdown Voltage
(IG
= ?1.0
Adc, VDS
= 0)
V(BR)GSS
?25
?
?
Vdc
Gate Reverse Current
(VGS
= ?15 Vdc, V
DS
= 0, T
A
= 25
°C)
(VGS
= ?15 Vdc, V
DS
= 0, T
A
= +125
°C)
IGSS
?
?
?
?
?1.0
?1.0
nAdc
Adc
Gate Source Cutoff Voltage
(VDS
= 10 Vdc, I
D
= 1.0 nAdc) J309
J310
VGS(off)
?1.0
?2.0
?
?
?4.0
?6.5
Vdc
ON CHARACTERISTICS
Zero?Gate?Voltage Drain Current(1)
(VDS
= 10 Vdc, V
GS
= 0) J309
J310
IDSS
12
24
?
?
30
60
mAdc
Gate?Source Forward Voltage
(VDS
= 0, I
G
= 1.0 mAdc)
VGS(f)
?
?
1.0
Vdc
SMALL?SIGNAL CHARACTERISTICS
Common?Source Input Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz) J309
J310
Re(yis)
?
?
0.7
0.5
?
?
mmhos
Common?Source Output Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(yos)
?
0.25
?
mmhos
Common?Gate Power Gain
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Gpg
?
16
?
dB
Common?Source Forward Transconductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(yfs)
?
12
?
mmhos
Common?Gate Input Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(yig)
?
12
?
mmhos
Common?Source Forward Transconductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
gfs
10000
8000
?
?
20000
18000
mhos
Common?Source Output Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
gos
?
?
250
mhos
Common?Gate Forward Transconductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
gfg
?
?
13000
12000
?
?
mhos
Common?Gate Output Conductance
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz) J309
J310
gog
?
?
100
150
?
?
mhos
Gate?Drain Capacitance
(VDS
= 0, V
GS
= ?10 Vdc, f = 1.0 MHz)
Cgd
?
1.8
2.5
pF
Gate?Source Capacitance
(VDS
= 0, V
GS
= ?10 Vdc, f = 1.0 MHz)
Cgs
?
4.3
5.0
pF
FUNCTIONAL CHARACTERISTICS
Equivalent Short?Circuit Input Noise Voltage
(VDS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
en
?
10
?
nVHz
1. Pulse Test: Pulse Width
300
s, Duty Cycle
3.0%.
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