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参数资料
| 型号： | JAN1N6101 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-16 |
| 文件页数： | 1/4页 |
| 文件大小： | 59K |
| 代理商： | JAN1N6101 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0083 Rev. 1 (082463)
Page 1 of 4
DEVICES
LEVELS
1N6101
JAN
JANTX
JANTXV
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 16-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by
directing them either to the positive side of the power supply line or to ground
(see figure 1). An external TVS diode may be added between the positive supply
line and ground to prevent overvoltage on the supply rail. They may also be used
in fast switching core-driver applications. This includes computers and peripheral
equipment such as magnetic cores, thin-film memories, plated-wire memories,
etc., as well as decoding or encoding applications. These arrays offer many
advantages of integrated circuits such as high-density packaging and improved
reliability. This is a result of fewer pick and place operations, smaller footprint,
smaller weight, and elimination of various discrete packages that may not be as
user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
http://www.microsemi.com
FEATURES
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 75 V at 5 μA
Low Leakage IR < 100nA at 40 V
Low Capacitance C < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-19500/474 for JAN,
JANTX, JANTXV, the prefixes respectively to part numbers.
16-PIN Ceramic
DIP
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| JAN1N6106 | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| JANTXV1N6118A | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| JANTXV1N6124 | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
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| JANTXV1N6110A | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JAN1N6102A | 制造商:Semtech Corporation 功能描述:T MET BI 500W 7V5 19500/516 |
| JAN1N6103 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| JAN1N6103A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 5.7V 500W 2PIN E-LINE - Bulk |
| JAN1N6103AUS | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 5.7V 500W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 5.7V 500W 2PIN MELF - Bulk |
| JAN1N6103US | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
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