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参数资料
| 型号： | JAN1N6101 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-16 |
| 文件页数： | 3/4页 |
| 文件大小： | 59K |
| 代理商： | JAN1N6101 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ISOLATED DIODE ARRAY
Qualified per MIL-PRF-19500/474
T4-LDS-0083 Rev. 1 (082463)
Page 3 of 4
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25
oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
REVERSE
CURRENT
IR2
VR = 20 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY
TIME
tfr
IF = 100 mA
MAXIMUM
REVERSE
RECOVERY
TIME
trr
IF = IR = 10 mAdc
irr = 1 mAdc
RL = 100 ohms
MAXIMUMF
ORWARD
VOLTAGE
MATCH
VF5
IF = 10 mA
PART
NUMBER
V
A
nA
pF
ns
mV
1N6101
1
0.1
25
4.0
15
10
5
NOTE 1: Pulsed: PW = 300 s +/- 50 s, duty cycle ≤ 2%, 90 s after leading edge.
SYMBOLS & DEFINITIONS
Symbol
DEFINITION
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified
current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Ct
Capacitance: The capacitance of the diode as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
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