参数资料
型号: JANHCA2N5151
英文描述: TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-39
中文描述: 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 5A条一(c)| TO - 39封装
文件页数: 18/23页
文件大小: 135K
代理商: JANHCA2N5151
MIL-PRF-19500/545D
4
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 (.28 mm).
4. TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane 0.054 + 0.001 - 0.000 (1.37 + 0.03 - 0.00 mm) below seating plane shall be within 0.007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC
8. LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
9. All three leads.
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
12. In accordance with ANSI Y14.5M, diameters are equivalent to
x symbology.
13. For transistor types 2N5151 and 2N5153, LL is 0.5 (12.70 mm) minimum, and 0.75 (19.05 mm) maximum.
14. For transistor types 2N5151L and 2N5153L, LL is 1.5 (38.10 mm) minimum and 1.75 (44.45 mm) maximum.
15. Lead designation, depending on device type, shall be as follows:
Lead number
TO-205
1
2
3
Emitter
Base
Collector
FIGURE 1. Physical dimensions (T0-205) - continued.
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JANHCA2N5415 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 1A I(C) | TO-39
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JANHCA2N6756 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | TO-3