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参数资料
| 型号： | JANHCA2N5151 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-39 |
| 中文描述： | 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 5A条一（c）| TO - 39封装 |
| 文件页数： | 6/23页 |
| 文件大小： | 135K |
| 代理商： | JANHCA2N5151 |
MIL-PRF-19500/545D
14
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
Resistance to solvents
3/, 4/, 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
4/
Group A, subgroup 2
Bond strength 3/, 4/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Breakdown voltage,
collector to emitter
3011
Bias condition D, IC = 100 mA
dc; IB = 0, pulsed (see 4.5.1)
V(BR)CEO
80
V dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 60 V dc;
VBE = 0
ICES1
1.0
A dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 100 V
dc; VBE = 0
ICES2
1.0
mA dc
Collector to emitter cutoff
current
3041
Bias condition D, VCE = 40 V dc;
IB = 0
ICEO
50
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 4 V dc;
IC = 0
IEBO1
1.0
A dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 5.5 V dc;
IC = 0
IEBO2
1.0
mA dc
See footnote at end of table.
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| JANHCA2N5153 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-39 |
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| JANHCA2N6756 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | TO-3 |
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