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参数资料
| 型号： | JANS2N7372 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA |
| 中文描述： | 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 5A条一（c）|至254AA |
| 文件页数： | 5/19页 |
| 文件大小： | 103K |
| 代理商： | JANS2N7372 |
MIL-PRF-19500/512E
13
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
inspection 3/
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles. n =
22 devices, c = 0
Heremetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical
measurements 4/
Group A, subgroup 2
Bond strength 3/ 4/
2037
Precondition TA = + 250°C at t =
24 hours or TA = + 300°C at t = 2
hours n = 11 wires, c = 0
Subgroup 2
Collector to base
cutoff current
3036
Bias condition D; VCB = 80 V dc
pulsed (see 4.5.1)
ICBO1
10
A dc
Emitter to base
cutoff current
3061
Bias condition D; VBE = 5 V dc
IEBO1
10
A dc
Collector - base cutoff
current
3036
Bias condition D; VCB = 60 V dc
ICBO2
10
nA dc
Collector - emitter
cutoff current
3041
Bias condition A; VBE = 2.0 V dc;
VCE = 60 V dc
ICEX1
25
nA dc
Base emitter cutoff
current
3061
Bias condition D; VBE = 3.0 V dc
IEBO2
25
nA dc
Forward-current
transfer ratio
3061
VCE = 5.0 V dc; IC = 100 A dc
hFE1
50
See footnotes at end of table.
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