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| 型号： | JANSH2N7298 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-254AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 9A条（丁）|对254AA |
| 文件页数： | 4/21页 |
| 文件大小： | 137K |
| 代理商： | JANSH2N7298 |
MIL-PRF-19500/368F
12
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical
measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements
shall be in accordance with the steps of 4.5.3.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131
of MIL-STD-750. The following conditions shall apply:
a.
Collector current magnitude during power application shall be 150 mA dc for RθJC.
b.
Collector emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be +25
°C ≤ T
R ≤ +35°C. The chosen reference
temperature shall be recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case for RθJC.
Maximum limit shall be RθJC = 35°C/W.
* 4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Symbol
Unit
Method
Conditions
1
Collector-base cutoff
current
3036
Bias condition D,
VCB = 360 V dc for 2N3439, 2N3439L,
2N3439UA
VCB = 250 V dc for 2N3440, 2N3440L,
2N3440UA
ICB01
(1)
100 percent of initial
value or 200 nA dc,
whichever is greater.
2
Forward current
transfer ratio
3076
VCE = 10 V dc;
IC = 20 mA dc;
pulsed see 4.5.1
hFE1
(1)
±15 percent change
from initial reading.
(1) Devices which exceed the table I, group A limits for this test shall not be accepted.
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