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参数资料
| 型号： | JANSH2N7298 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-254AA |
| 中文描述： | 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 9A条（丁）|对254AA |
| 文件页数： | 5/21页 |
| 文件大小： | 137K |
| 代理商： | JANSH2N7298 |
MIL-PRF-19500/368F
13
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to 3/ 4/ 5/
solvent
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical measurements 4/
Group A, subgroup 2
Bond strength 3/ 4/
2037
Precondition TA = +250°C at t = 24 hrs
or TA = +300°C at t = 2 hrs,
n = 11 wires, c = 0
Decap internal visual (design
verification) 4/
2075
n = 4 devices, c = 0
Subgroup 2
Emitter to base cutoff current
3061
Bias condition D, VEB = 7 V dc
IEBO1
10
A dc
Collector to emitter cutoff
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3041
Bias condition D
VCE = 300 V dc
VCE = 200 V dc
ICEO
2
A dc
Collector to emitter cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3041
Bias condition A, VBE = -1.5 V dc
VCE = 450 V dc
VCE = 300 V dc
ICEX
5
A dc
Collector to base cutoff
current
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
3036
Bias condition D
VCB = 360 V dc
VCB = 250 V dc
ICBO1
2
A dc
See footnotes at end of table.
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