参数资料
型号: JANTX2N4234
英文描述: TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-5
中文描述: 晶体管|晶体管|进步党| 40V的五(巴西)总裁| 1A条一(c)|至5
文件页数: 19/19页
文件大小: 103K
代理商: JANTX2N4234
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
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