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| 型号： | JANTX2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 双极型晶体管 |
| 文件页数： | 1/19页 |
| 文件大小： | 103K |
| 代理商： | JANTX2N5415UA |
MIL-PRF-19500/512E
23 July 2001
SUPERSEDING
MIL-PRF-19500/512D
14 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND
JANKC2N4033 AND JANHC2N4033
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in
high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated
device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and
figure 5 (JANKC and JANHC) herein.
1.3 Maximum ratings.
PT (1)
TA = +25°C
PT (2)
TA = +25°C
PT (3)
TA = +25°C
PT (1)
TA = +25°C
VCBO
VCEO
VEBO
IC
TOP and TSTG
2N4029
2N4033
2N4033UA
2N4033UB
W
0.5
W
0.8
W
0.65
W
0.5
V dc
80
V dc
80
V dc
5.0
A dc
1.0
°C
-65 to +200
R
θJA
R
θJA
R
θJA
2N4029
2N4033UB
2N4033
2N4033UA
°C/W
325
°C/W
175
°C/W
210
(1) Derate linearly 3.08 mW/
°C above TA = +37.5°C.
(2) Derate linearly 5.7 mW/
°C above TA = +60°C.
(3) Derate linearly 4.76 mW/
°C above TA = +63.5°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX2N5416UA | BJT |
| JANTX2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5665 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N5666S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTX2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
| JANTX2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/485 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:2V @ 5mA，50mA 电流 - 集电极截止（最大值）:1mA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:U4 标准包装:1 |
| JANTX2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANTX2N5581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-46 - Bulk |
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