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参数资料
| 型号： | JANTX2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 双极型晶体管 |
| 文件页数： | 6/19页 |
| 文件大小： | 103K |
| 代理商： | JANTX2N5415UA |
MIL-PRF-19500/512E
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 – Continued
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 100 mA dc
hFE2
100
300
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 500 mA dc
pulsed (see 4.5.1)
hFE3
70
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 1.0 A dc;
pulsed (see 4.5.1)
hFE4
25
Collector – emitter
saturated voltage
3071
IC = 150 mA dc; IB = 15 mA dc
pulsed (see 4.5.1)
VCE(SAT)1
0.15
V dc
Collector – emitter
saturated voltage
3071
IC = 500 mA dc; IB = 50 mA dc;
pulsed (see 4.5.1)
VCE(SAT)2
0.50
V dc
Collector – emitter
saturated voltage
3071
IC = 1.0 A dc; IB = 100 mA dc;
pulsed (see 4.5.1)
VCE(SAT)3
1.0
V dc
Base – emitter
Saturated voltage
3066
Test condition A; IC = 150 mA
dc; IB = 15 mA dc pulsed (see
4.5.1)
VBE(SAT)1
0.9
V dc
Base - emitter
Saturated voltage
3066
Test condition A; IC = 500 mA
dc; IB = 50 mA dc; pulsed (see
4.5.1)
VBE(SAT)2
1.2
V dc
Subgroup 3
High-temperature
operation:
TA = +150°C
Collector -base
cutoff current
3036
Bias condition D;
VCB = 60 V dc
ICBO3
25
A dc
Low-temperature
operation:
TA = -55°C
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 500 mA dc
pulsed (see 4.5.1)
hFE5
30
See footnotes at end of table.
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PDF描述 |
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| JANTX2N5416UA | BJT |
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| JANTX2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTX2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
| JANTX2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/485 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:2V @ 5mA，50mA 电流 - 集电极截止（最大值）:1mA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:U4 标准包装:1 |
| JANTX2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANTX2N5581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-46 - Bulk |
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