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参数资料
| 型号： | JANTX2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 双极型晶体管 |
| 文件页数： | 2/19页 |
| 文件大小： | 103K |
| 代理商： | JANTX2N5415UA |
MIL-PRF-19500/512E
10
4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750.
a.
IM measurement current ...................... 5 mA.
b.
IH forward heating current ................... 200 mA (min).
c.
tH heating time..................................... 25 - 30 ms.
d.
tmd measurement delay time .............. 60 s max.
e.
VCE collector-emitter voltage .............. 10 V dc minimum( same as VH ).
f.
VH collector-emitter heating voltage ... 10 V ( minimum ).
g.
tSW sample window time .................... 10 s ( maximum ).
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 60°C/W. (UA and UB); 67°C/W (2N4029
and 2N4033).
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1
Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein: delta
requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step
in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
1037
VCB = 10 V dc.
B5
1027
VCB = 10 – 20 V dc; PD ≥ 75 percent of maximum rated PT (see 1.3). Option 1:
96 hours min, sample size in accordance with table VIa of MIL-PRF-19500,
adjust TA to achieve TJ = +275°C minimum. Option 2: 216 hours., sample size
= 45, c = 0; adjust TA to achieve TJ = +225°C minimum.
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX2N5416UA | BJT |
| JANTX2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5665 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N5666S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTX2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
| JANTX2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/485 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:2V @ 5mA，50mA 电流 - 集电极截止（最大值）:1mA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:U4 标准包装:1 |
| JANTX2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANTX2N5581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-46 - Bulk |
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