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| 型号： | JANTX2N5415UA |
| 英文描述： | BJT |
| 中文描述： | 双极型晶体管 |
| 文件页数： | 4/19页 |
| 文件大小： | 103K |
| 代理商： | JANTX2N5415UA |
MIL-PRF-19500/512E
12
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Delta requirements. Delta requirements shall be as follows: 3/ 4/ 5/ 6/
Step
Inspection
MIL-STD-750
Symbol
Limit
Unit
1/ 2/
Method
Conditions
1.
Collector-base cutoff
current
3036
Bias condition D,
VCB = 60 V dc
ICB02 (1)
100 percent of initial
value or 5 nA dc,
whichever is greater.
2.
Forward current
transfer ratio
3076
VCE = 5 V dc;
IC = 100 mA dc;
pulsed see 4.5.1
hFE2 (1)
±25 percent change
from initial reading.
1/ See MIL-PRF-19500 for sampling plan.
2/ Devices which exceed the group A limits for this test shall not be acceptable.
3/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table II herein, step 2.
b. Subgroups 4 and 5, see table II herein, step 2.
4/ The delta measurements for table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table II herein, step 1.
b. Subgroups 3 and 6, see table II herein, step 1.
5/ The delta measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 6, see table II herein, step 1.
相关PDF资料 |
PDF描述 |
|---|---|
| JANTX2N5416UA | BJT |
| JANTX2N5664 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5665 | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-66 |
| JANTX2N5666 | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 3A I(C) | TO-5 |
| JANTX2N5666S | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTX2N5416 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk |
| JANTX2N5416S | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
| JANTX2N5416U4 | 功能描述:TRANS PNP 300V 1A 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/485 包装:散装 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:2V @ 5mA，50mA 电流 - 集电极截止（最大值）:1mA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 50mA，10V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:U4 标准包装:1 |
| JANTX2N5416UA | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk |
| JANTX2N5581 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-46 - Bulk |
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