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参数资料
| 型号： | JANTXV1N5807US |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5B, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 159K |
| 代理商： | JANTXV1N5807US |
APTGT150A120D1G
APT
G
T
150A120D
1G
–
Rev
1
Decem
ber
,2009
www.microsemi.com
2- 4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
A
Tj = 25°C
1.7
2.1
VCE(sat)
Collector Emitter Saturation Voltage
VGE = 15V
IC = 150A
Tj = 125°C
2.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 6 mA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
10.8
Coes
Output Capacitance
0.56
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
0.5
nF
QG
Gate charge
VGE=±15V, IC=150A
VCE=600V
1.4
C
Td(on)
Turn-on Delay Time
250
Tr
Rise Time
90
Td(off)
Turn-off Delay Time
550
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
130
ns
Td(on)
Turn-on Delay Time
300
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
650
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
180
ns
Eon
Turn on Energy
Tj = 125°C
11
Eoff
Turn off Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 4.7Ω
Tj = 125°C
26
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10s ; Tj = 125°C
600
A
Reverse diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward current
Tc = 80°C
150
A
Tj = 25°C
1.6
2.1
VF
Diode Forward Voltage
IF = 150A
VGE = 0V
Tj = 125°C
1.6
V
Tj = 25°C
250
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
15
Qrr
Reverse Recovery Charge
Tj = 125°C
29
C
Tj = 25°C
7
Err
Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =3000A/s
Tj = 125°C
12
mJ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| JANTXV1N5809 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JANTXV1N5809URS | 功能描述:Diode Standard 100V 3A Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/477 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:100V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf）:875mV @ 4A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:30ns 不同?Vr 时的电流 - 反向漏电流:5μA @ 100V 不同?Vr，F 时的电容:60pF @ 10V，1MHz 安装类型:表面贴装 封装/外壳:SQ-MELF，B 供应商器件封装:B，SQ-MELF 工作温度 - 结:-65°C ~ 175°C 标准包装:1 |
| JANTXV1N5809US | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 6A 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Trays |
| JANTXV1N5811 | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case G-112 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JANTXV1N5811CBUS | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin E-MELF |
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