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参数资料
| 型号： | JDH2S02FS |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封装： | LEAD FREE, 1-1L1A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 164K |
| 代理商： | JDH2S02FS |
JDH2S02FS
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S02FS
UHF Band Mixer
Suitable for reducing set size through the use of a two-pin small
package supporting high-density mounting
Lead (Pb) free
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VR
10
V
Forward current
IF
10
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0.
8}
0.
05
0.2
1.
0}
0.
05
0.1} 0.05
0.6} 0.05
°
0.
1
0.
1
A
0.48 +0 .02
-0 .03
}0 .05
A
M
0.07
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 1 mA
0.24
V
Forward current
IF
VF = 0.5 V
2
mA
Reverse current
IR
VR = 0.5 V
25
A
Capacitance
CT
VR = 0.2 V, f = 1 MHz
0.3
pF
Note: Signal level when capacitance is measured: Vsig
= 20 mVrms
Marking
T
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
2004-10-19
1
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