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参数资料
| 型号： | JDP2S02T |
| 元件分类： | PIN二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | TESC, 1-1H1A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 91K |
| 代理商： | JDP2S02T |
JDP2S02T
2003-03-24
1
TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S02T
UHF~VHF Band RF Attenuator Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 1.0 (typ.)
Low capacitance: CT = 0.3 pF (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 mA
30
V
Reverse current
IR
VR = 30 V
0.1
mA
Forward voltage
VF
IF = 50 mA
0.9
0.95
V
Capacitance
CT
VR = 1 V, f = 1 MHz
0.3
0.5
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
1.0
1.5
W
Note: Signal level when capacitance is measured: Vsig
= 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1H1A
Weight: 0.0013 g (typ.)
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相关代理商/技术参数 |
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| JDP2S04E | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band RF Attenuator Applications |
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