- 您现在的位置：买卖IC网 > PDF目录65677 > JDP2S05CT SILICON, PIN DIODE PDF资料下载
参数资料
| 型号： | JDP2S05CT |
| 元件分类： | PIN二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | CST2, 1-1P1A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 117K |
| 代理商： | JDP2S05CT |
JDP2S05CT
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S05CT
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 1.5 Ω (typ.)
Low capacitance: CT = 0.32 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
20
V
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 0.1 μA
20
V
Reverse current
IR
VR = 20 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.94
V
Capacitance(Note2)
CT
VR = 1 V, f = 1 MHz
0.21
0.32
0.42
pF
Series resistance
rs
IF = 1 mA, f = 100 MHz
1.5
2.2
Ω
Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
1.0±
0.05
0.6±0.05
0.38
+0.02 -0.03
1
2
１：Cathode
２：Anode
0.05±
0.03
0.05±0.03
0.5±0.03
0.65
0.25±
0.03
0.25±
0.03
JEDEC
―
JEITA
―
TOSHIBA
1-1P1A
Weight: 0.00077 g(Typ.)
Unit:mm
03
Cathode
Part Number
CST2
相关PDF资料 |
PDF描述 |
|---|---|
| JDP2S08SC | SILICON, PIN DIODE |
| JDP2S08SC | SILICON, PIN DIODE |
| JDP3C04TU | 50 V, SILICON, PIN DIODE |
| JDV2S01E | UHF BAND, 3.15 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| JDV2S02FS | UHF BAND, 2.05 pF, SILICON, VARIABLE CAPACITANCE DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| JDP2S05FS | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Switch Applications |
| JDP2S08SC | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Switch Applications |
| JDP2S08SC(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:DIODE PIN 30V 50MA SC2 制造商:Toshiba America Electronic Components 功能描述:PIN Diodes Radio-Freq SGL 30V 0.21pF 1 Ohm |
| JDP2S12CR | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:UHF~VHF Band RF Switch Applications |
| JDP2S12CR(TE85L,QM | 制造商:Toshiba America Electronic Components 功能描述:DIODE PIN 180V 1A S-FLAT |
发布紧急采购，3分钟左右您将得到回复。