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参数资料
| 型号： | JDS2S03S |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封装： | 1-1K1A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 114K |
| 代理商： | JDS2S03S |
JDS2S03S
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDS2S03S
VHF Tuner Band Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Small total capacitance: CT = 0.7 pF (typ.)
Low series resistance: rs = 0.6 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
100
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 2 mA
0.85
V
Reverse current
IR
VR = 15 V
0.1
μA
Reverse voltage
VR
IR = 1 μA
30
V
Total capacitance
CT
VR = 6 V, f = 1 MHz
0.7
1.2
pF
Series resistance
rs
IF = 2 mA, f = 100 MHz
0.6
0.9
Ω
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g
0
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