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参数资料
| 型号： | JDV2S16S |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 3.59 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | 1-1K1A, SESC, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 192K |
| 代理商： | JDV2S16S |
JDV2S16S
2005-08-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S16S
VCO for the UHF band
High capacitance ratio: C0.5V/C2.5V = 2.0 (typ.)
Low series resistance: rs = 0.55 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C0.5V
VR = 0.5 V, f = 1 MHz
3.38
3.8
Capacitance
C2.5V
VR = 2.5 V, f = 1 MHz
1.67
1.9
pF
Capacitance ratio
C0.5V/C2.5V
1.9
2.0
2.1
Series resistance
rs
VR = 1 V, f = 470 MHz
0.55
0.7
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
N
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