参数资料
型号: JDV2S25FS
元件分类: 变容二极管
英文描述: UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
封装: LEAD FREE, 1-1L1A, FSC, 2 PIN
文件页数: 1/3页
文件大小: 241K
代理商: JDV2S25FS
JDV2S25FS
2005-11-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S25FS
VCO for UHF Band Radio
High capacitance ratio: C1V/C4V = 2.9 (typ.)
Low series resistance: rs = 0.49 (typ.)
This device is suitable for use in small tuners.
Lead (Pb)-free.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
5.62
5.99
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.91
2.12
pF
Capacitance ratio
C1V/C4V
2.77
2.98
Series resistance
rs
VR = 1 V, f = 470 MHz
0.49
0.64
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0.
0
.05
0.2
1.
0
±
0
.05
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
fSC
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