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参数资料
| 型号： | JDV2S71E |
| 元件分类： | 变容二极管 |
| 英文描述： | UHF BAND, 6.6 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封装： | ESC, 1-1G1A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 131K |
| 代理商： | JDV2S71E |
JDV2S71E
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S71E
UHF SHF TUNING
High capacitance ratio: C1 V/C 25V = 11.5 (typ.)
Low series resistance: rs = 1.0 (typ.)
Excellent C-V characteristics,and small tracking error.
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Peak reverse voltage
VRM
35(RL=10 kohm)
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
30
V
Reverse current
IR
VR = 28 V
10
nA
Capacitance
C1 V
VR = 1 V, f = 1 MHz
6
7.2
pF
Capacitance
C25 V
VR = 25V, f = 1 MHz
0.49
0.64
pF
Capacitance ratio
C1 V/C25 V
10
11.5
Series resistance
rs
VR = 5 V, f = 470 MHz
1
1.5
Ω
Note1: Signal level when capacitance is measured: Vsig
= 500 mVrms
Note2:Available in matched group for capacitance to 6%
(min)
C
(min)
C
(max)
C
<= 0.06
(VR=1 ~ 25V)
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
FJ
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