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参数资料
| 型号： | K10N07FM |
| 厂商： | 意法半导体 |
| 英文描述： | Fully Autoprotected Power MOSFET(全自动保护功率MOSFET) |
| 中文描述： | 充分Autoprotected功率MOSFET（全自动保护功率MOSFET的） |
| 文件页数： | 1/14页 |
| 文件大小： | 158K |
| 代理商： | K10N07FM |
VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
June 1998
BLOCK DIAGRAM (
)
TYPE
V
clamp
R
DS(on)
0.1
0.1
0.1
0.1
I
lim
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
70 V
70 V
70 V
70 V
10 A
10 A
10 A
10 A
I
LINEAR CURRENT LIMITATION
I
THERMAL SHUT DOWN
I
SHORT CIRCUIT PROTECTION
I
INTEGRATED CLAMP
I
LOW CURRENT DRAWN FROM INPUT PIN
I
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
I
ESD PROTECTION
I
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI
and VNV10N07 are monolithic devices made
using
STMicroelectronics
Technology,
intended
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
VIPower
replacement
M0
of
for
the chip in harsh enviroments.
Fault feedbackcan be detected by monitoring the
voltageat the input pin.
1
10
PowerSO-10
1
3
1
2
3
ISOWATT220
D2PAK
TO-263
SOT82-FM
(
) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10;SOURCE =1,2,4,5; DRAIN = TAB
1/14
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