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参数资料
| 型号： | K10N07FM |
| 厂商： | 意法半导体 |
| 英文描述： | Fully Autoprotected Power MOSFET(全自动保护功率MOSFET) |
| 中文描述： | 充分Autoprotected功率MOSFET（全自动保护功率MOSFET的） |
| 文件页数： | 2/14页 |
| 文件大小： | 158K |
| 代理商： | K10N07FM |
ABSOLUTE MAXIMUMRATING
Symbol
Parameter
Value
Unit
PowerSO-10
D2PAK
SOT-82FM
ISOWATT220
V
DS
Drain-source Voltage (V
in
= 0)
Internally Clamped
V
V
in
Input Voltage
18
V
I
D
I
R
Drain Current
Internally Limited
A
Reverse DC Output Current
-14
A
V
esd
Electrostatic Discharge (C= 100 pF,
R=1.5 K
)
Total Dissipation at T
c
= 25
o
C
2000
V
P
tot
50
9.5
31
W
o
C
o
C
o
C
T
j
T
c
Operating Junction Temperature
Internally Limited
Case Operating Temperature
Internally Limited
T
stg
Storage Temperature
-55 to 150
THERMAL DATA
ISOWATT220
PowerSO-10
SOT82-FM
D2PAK
R
thj-case
Thermal Resistance
Junction-case
Max
4
2.5
13
2.5
o
C/W
R
thj-amb
Thermal Resistance
Junction-ambient
Max
62.5
50
100
62.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CLAMP
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V
in
= 0)
I
D
= 200 mA
V
in
= 0
60
70
80
V
V
CLTH
I
D
= 2 mA
V
in
= 0
55
V
V
INCL
I
in
= -1 mA
-1
-0.3
V
I
DSS
V
DS
= 13 V
V
DS
= 25 V
V
in
= 0
V
in
= 0
50
200
μ
A
μ
A
μ
A
I
ISS
Supply Current from
Input Pin
V
DS
= 0 V
V
in
= 10 V
250
500
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IN(th)
Input Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
in
I
D
+ Ii
n
= 1 mA
0.8
3
V
R
DS(on)
V
in
= 10 V
V
in
= 5 V
I
D
= 5 A
I
D
= 5 A
0.1
0.14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
2/14
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