参数资料
型号: K1S64161CC-W3000
元件分类: SRAM
英文描述: 4M X 16 STANDARD SRAM, 70 ns, UUC
封装: ROHS COMPLIANT, WAFER
文件页数: 6/13页
文件大小: 244K
代理商: K1S64161CC-W3000
Revision 1.0
April 2005
K1S64161CC
- 2 -
UtRAM
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(tRC)
Power Dissipation
PKG Type
Standby
(ISB1, Max.)
Operating
(ICC2, Max.)
K1S64161CC-I
Industrial(-40~85
°C)
2.7~3.1V
70ns
120
A(< 40°C)
40mA
48-FBGA-6.00x8.00
180
A(< 85°C)
4M x 16 bit Page Mode Uni-Transistor CMOS RAM
GENERAL DESCRIPTION
The K1S64161CC is fabricated by SAMSUNG
′s advanced
CMOS technology using one transistor memory cell. The device
supports 4 page read operation and Industrial temperature
range. The device supports dual chip selection for user inter-
face. The device also supports internal Temperature Compen-
sated Self Refresh mode for the standby power saving at room
temperature range.
FEATURES
Process Technology: CMOS
Organization: 4M x16 bit
Power Supply Voltage: 2.7~3.1V
Three State Outputs
Compatible with Low Power SRAM
Support 4 page read mode
Package Type: 48-FBGA-6.00x8.00
PIN DESCRIPTION
1) Reserved for future use
2) VCC and VCCQ should be the same level
Name
Function
Name
Function
CS1,CS2
Chip Select Inputs
Vcc/VCCQ2) Power Supply(core / I/O)
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O9~16)
A0~A21
Address Inputs
LB
Lower Byte(I/O1~8)
I/O1~I/O16 Data Inputs/Outputs
NC
No Connection1)
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice
.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O1~I/O8
Data
cont
Data
cont
Data
cont
I/O9~I/O16
VCC
VSS
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
VCCQ
48-FBGA: Top View(Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
I/O13
A21
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
A20
1
234
56
A
B
C
D
E
F
G
H
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