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参数资料
| 型号： | K3296 |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS场效应管 |
| 文件页数： | 3/8页 |
| 文件大小： | 422K |
| 代理商： | K3296 |
Data Sheet D14063EJ2V0DS
3
2SK3296
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
3
100
160
120
140
1
Pulsed
VGS =10 V
40
20
60
80
7.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
01
2
3
4
56
VDS = 10 V
10
1
0.1
0.01
0.001
100
1000
Tch =
50C
25C
75C
125C
150C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
1.0
1.5
0.5
2.0
2.5
3.0
50
0
50
100
150
0
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
Pulsed
VDS = 10 V
10
1
100
0.1
1
10
100
Tch =
50C
25C
25C
75C
150C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
10
515
20
30
40
50
Pulsed
ID = 28 A
18 A
7 A
10
20
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
10
1
20
30
40
50
1000
100
Pulsed
0
VGS = 4.5 V
7.0 V
10 V
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