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参数资料
| 型号： | K3296 |
| 厂商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS场效应管 |
| 文件页数： | 4/8页 |
| 文件大小： | 422K |
| 代理商： | K3296 |
Data Sheet D14063EJ2V0DS
4
2SK3296
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
5
0
50
100
150
10
20
25
15
7.0 V
10 V
VGS = 4.5 V
ID = 18 A
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.2
1.4
1
ISD
-
Diode
Forward
Current
-
A
0
1.6
VSD - Source to Drain Voltage - V
0.6
0.8
0.4
0.2
Pulsed
0.1
0.01
1
10
100
1000
0 V
4.5 V
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
5
1
0.1
100
10000
1000
10
100
tf
tr
td(on)
td(off)
VDD = 10 V
VGS = 10 V
RG = 10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
ISD - Diode Forward Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
30
40
10
5
15
20
4
0
8
VDD = 16 V
10 V
4 V
VDS
16
12
ID = 35 A
VGS
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