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参数资料
| 型号： | K6R1004V1C-C10 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（3.3V的）。 |
| 文件页数： | 5/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004V1C-C10 |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 5 -
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
CS
Address
OE
Data ou
t
t
AA
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
RC
t
OE
t
CO
t
PU
t
PD
t
HZ(3,4,5)
50%
50%
V
CC
Current
I
CC
I
SB
Valid Data
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Sym-
bol
K6R1004V1C-10
K6R1004V1C-12
K6R1004V1C-15
K6R1004V1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
10
-
12
-
15
-
20
-
ns
Chip Select to End of Write
t
CW
7
-
-
10
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE High)
t
WP
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE Low)
t
WP1
10
-
12
-
15
-
20
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
5
0
6
0
7
0
9
ns
Data to Write Time Overlap
t
DW
5
-
6
-
7
-
8
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
3
-
ns
相关PDF资料 |
PDF描述 |
|---|---|
| K6R1004V1C-C12 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C15 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C20 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004V1C-C12 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C15 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
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