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参数资料
| 型号： | K6R1004V1C-C10 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| 中文描述： | 256Kx4位（与OE）的高速CMOS静态RAM（3.3V的）。 |
| 文件页数： | 7/9页 |
| 文件大小： | 137K |
| 代理商： | K6R1004V1C-C10 |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 7 -
CCPCCCRPreliminary
t
CW(3)
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
NOTES
(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;
A write ends at the earliest transition CS going high or WE going high. t
WP
is measured from the beginning of write to the end of
write.
3. t
CW
is measured from the later of CS going low to end of write.
4. t
AS
is measured from the address valid to the beginning of write.
5. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CS or WE going high.
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10.When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS=Controlled)
Address
CS
t
DW
t
DH
Valid Data
WE
Data in
Data out
High-Z
High-Z(8)
t
WP(2)
t
AS(4)
t
WC
High-Z
High-Z
t
LZ
t
WHZ(6)
FUNCTIONAL DESCRIPTION
* X means Don
′
t Care.
CS
WE
OE
Mode
I/O Pin
Supply Current
H
X
X*
Not Select
High-Z
I
SB
, I
SB1
L
H
H
Output Disable
High-Z
I
CC
L
H
L
Read
D
OUT
I
CC
L
L
X
Write
D
IN
I
CC
相关PDF资料 |
PDF描述 |
|---|---|
| K6R1004V1C-C12 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C15 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C20 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
相关代理商/技术参数 |
参数描述 |
|---|---|
| K6R1004V1C-C12 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C15 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-C20 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
| K6R1004V1C-I10 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating). |
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