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参数资料
| 型号： | L0103MTRP |
| 元件分类： | 晶闸管 |
| 英文描述： | 600 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-4 |
| 文件页数： | 3/8页 |
| 文件大小： | 266K |
| 代理商： | L0103MTRP |
45
2008 Littelfuse, Inc.
Revised: July 9, 2008
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
45
2008 Littelfuse, Inc.
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
L01 Series
EV Series 1 Amp Sensitive Triacs
EV
1
.0
A
TRIA
Cs
Figure 1: Denition of Quadrants
MT2 POSITIVE
(Positive Half Cycle)
MT2 NEGATIVE
(Negative Half Cycle)
MT1
MT2
+ I
G T
REF
QII
MT1
I
GT
GATE
MT2
REF
MT1
MT2
REF
MT1
MT2
REF
QI
QIV
QIII
ALL POLARITIES ARE REFERENCED TO MT1
(
-)
I
GT
GATE
(+)
I
GT -
I
GT
GATE
(
-)
I
GT
GATE
(+)
+
-
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
Figure 2: Normalized DC Gate Trigger Current for
All Quadrants vs. Junction Temperature
Figure 4: Normalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
A
v
er
ag
e
On-stat
e
P
o
w
er
Dissipation
[P
D(D
A
V
)
]-
W
a
tt
s
RMS On-state Current [I
T(RMS)] - Amps
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
Maximum
Allo
w
able
Case
Temper
at
ur
e
(T
C
)-
C
RMS On-state Current [I
T(RMS)] - Amps
130
125
120
110
100
90
80
70
60
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
SOT-223
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as
shown on dimensional drawings
TO-92
Ratio
of
I GT
(T
J
=
2
5
°C)
Junction Temperature (T
J)- C
3.0
2.0
1.0
0.0
-40
-15
+25
+65
+105
+125
Ratio
of
I H
(T
J
=
2
5
°C)
Junction Temperature (T
J)- C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
+5
+25
+45
+65
+85
+105
+125
-55
INITIAL ON-STATE CURRENT = 100mA (DC)
Ratio
of
V
GT
V
GT
(T
J
=
2
5
°C)
Junction Temperature (T
J)- °C
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.0
-55
-40
-15
+5
+25
+45
+65
+85
+105
+125
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L0103MTRP4 | 功能描述:双向可控硅 1A 600V 3 3 3 5 mA Sen Triac RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L0103NE | 功能描述:双向可控硅 SEN TRIAC 1A 800V 3 3 3 5 mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L0103NEAP | 功能描述:双向可控硅 SEN TRIAC 1A 800V 3 3 3 5 mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L0103NERP | 功能描述:双向可控硅 SEN TRIAC 1A 800V 3 3 3 5 Ma RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| L0103NT | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:New 1 Amp bi-directional solid state switch series offering direct interface |
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