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参数资料
| 型号： | L6382D5TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 电源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20 |
| 封装： | ROHS COMPLIANT , SOP-20 |
| 文件页数： | 21/21页 |
| 文件大小： | 267K |
| 代理商： | L6382D5TR |
L6382D5
Electrical characteristics
9/21
Symbol
Pin
Parameter
Test condition
Min
Typ
Max
Unit
TFALL
12
Fall time
Cload = 1nF
75
ns
TDELAY
12
Propagation delay
(LGI to LSG)
high to low and low to
high
300
ns
RB
12
Pull down Resistor
to OUT
20
K
High-side floating gate-driver supply
ILKBOOT
11
VBOOT pin leakage
current
VBOOT = 580V
5A
ILKOUT
13
OUT pin leakage
current
VOUT = 562V
5A
RDS(on)
Synchronous
bootstrap
diode on-
resistance
VLVG = HIGH
150
Forward Voltage
Drop
at 10 mA forward current
2.4
V
Forward Current
at 5V forward voltage
drop
20
mA
VREF
VREF
20
Reference voltage
15mA load.
4.9
5
5.1
V
20
Load regulation
IRef = -3 to +30 mA
-20
2
mV
20
Voltage change
15mA load; Vcc = 9V to
15V
15
mV
20
VREF latched
protection
3.2
V
20
VREF Clamp
@3mA
VCC from 0 to VCCON
during start-up; Vcc from
VREF(OFF) to 0 during
shut-down; VREF < 2V
1.2
1.8
V
IREF
20
Current Drive
Capability
-3
+30
mA
Save mode
-3
+10
mA
Overcurrent buffer stage
VCSI
19
Comparator Level
0.52
0.54
0.56
V
ICSI
19
Input Bias Current
500
nA
Propagation delay
CSO turn off to LSG low
200
ns
Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, CDRIVER = 1nF
unless otherwise specified) (continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| L6382DTR | 功能描述:电池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| L6384 | 功能描述:功率驱动器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
| L6384D | 功能描述:功率驱动器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| L6384D | 制造商:STMicroelectronics 功能描述:IC MOSFET DRIVER HALF BRIDGE ((NW)) |
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