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参数资料
| 型号： | L6590N |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 稳压器 |
| 英文描述： | 0.7 A SWITCHING REGULATOR, 74 kHz SWITCHING FREQ-MAX, PDIP8 |
| 封装： | MINI, DIP-8 |
| 文件页数： | 6/23页 |
| 文件大小： | 383K |
| 代理商： | L6590N |
Obsolete
Product(s)
- Obsolete
Product(s)
L6590
14/23
APPLICATION INFORMATION
In the following sections the functional blocks as well as the most important internal functions of the device will
be described.
Start-up Circuit
When power is first applied to the circuit and the voltage on the bulk capacitor is sufficiently high, an internal
high-voltage current generator is sufficiently biased to start operating and drawing about 4.5 mA through the
primary winding of the transformer and the drain pin. Most of this current charges the bypass capacitor connect-
ed between pin Vcc (3) and ground and makes its voltage rise linearly.
As the Vcc voltage reaches the start-up threshold (14.5V typ.) the chip, after resetting all its internal logic, starts
operating, the internal power MOSFET is enabled to switch and the internal high-voltage generator is discon-
nected. The IC is powered by the energy stored in the Vcc capacitor until the self-supply circuit (typically an
auxiliary winding of the transformer) develops a voltage high enough to sustain the operation.
As the IC is running, the supply voltage, typically generated by a self-supply winding, can range between 16 V
(Overvoltage protection limit, see the relevant section) and 7 V, threshold of the Undervoltage Lockout. Below
this value the device is switched off (and the internal start-up generator is activated). The two thresholds are in
tracking.
The voltage on the Vcc pin is limited at safe values by a clamp circuit. Its 17V threshold tracks the Overvoltage
protection threshold.
Figure 32. Start-up circuit internal schematic
Power MOSFET and Gate Driver
The power switch is implemented with a lateral N-channel MOSFET having a V(BR)DSS of 700V min. and a typ-
ical RDS(on) of 13. It has a SenseFET structure to allow a virtually lossless current sensing (used only for pro-
tection).
During operation in Discontinuous Conduction Mode at low mains the drain voltage is likely to go below ground.
Any risk of injecting the substrate of the IC is prevented by an internal structure surrounding the switch.
The gate driver of the power MOSFET is designed to supply a controlled gate current during both turn-on and
turn-off in order to minimize common mode EMI.
Under UVLO conditions an internal pull-down circuit holds the gate low in order to ensure that the power MOS-
FET cannot be turned on accidentally.
17 V
DRAIN
Vcc
15 M
UVLO
150
GND
POWER
MOSFET
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相关代理商/技术参数 |
参数描述 |
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| L6591 | 功能描述:开关变换器、稳压器与控制器 PWM CONTROLLER ZVS HALF-BRIDGE RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| L6591TR | 功能描述:开关变换器、稳压器与控制器 PWM CONTROLLER ZVS HALF-BRIDGE RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| L6598 | 功能描述:PMIC 解决方案 High Volt Reson Cont RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| L6598_04 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH VOLTAGE RESONANT CONTROLLER |
| L6598D | 功能描述:PMIC 解决方案 High Volt Reson Cont RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
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