参数资料
型号: LCMXO640C-3FT256I
厂商: LATTICE SEMICONDUCTOR CORP
元件分类: PLD
中文描述: FLASH PLD, 4.9 ns, PBGA256
封装: 17 X 17 MM, FTBGA-256
文件页数: 14/96页
文件大小: 1389K
代理商: LCMXO640C-3FT256I
2-18
Architecture
Lattice Semiconductor
MachXO Family Data Sheet
Table 2-10. Supported Output Standards
sysIO Buffer Banks
The number of Banks vary between the devices of this family. Eight Banks surround the two larger devices, the
MachXO1200 and MachXO2280 (two Banks per side). The MachXO640 has four Banks (one Bank per side). The
smallest member of this family, the MachXO256, has only two Banks.
Each sysIO buffer Bank is capable of supporting multiple I/O standards. Each Bank has its own I/O supply voltage
(VCCIO) which allows it to be completely independent from the other Banks. Figure 2-18, Figure 2-18, Figure 2-20
and Figure 2-21 shows the sysIO Banks and their associated supplies for all devices.
Output Standard
Drive
VCCIO (Typ.)
Single-ended Interfaces
LVTTL
4mA, 8mA, 12mA, 16mA
3.3
LVCMOS33
4mA, 8mA, 12mA, 14mA
3.3
LVCMOS25
4mA, 8mA, 12mA, 14mA
2.5
LVCMOS18
4mA, 8mA, 12mA, 14mA
1.8
LVCMOS15
4mA, 8mA
1.5
LVCMOS12
2mA, 6mA
1.2
LVCMOS33, Open Drain
4mA, 8mA, 12mA, 14mA
LVCMOS25, Open Drain
4mA, 8mA, 12mA, 14mA
LVCMOS18, Open Drain
4mA, 8mA, 12mA, 14mA
LVCMOS15, Open Drain
4mA, 8mA
LVCMOS12, Open Drain
2mA, 6mA
PCI33
3
N/A
3.3
Differential Interfaces
LVDS
1, 2
N/A
2.5
BLVDS, RSDS
2
N/A
2.5
LVPECL
2
N/A
3.3
1. MachXO1200 and MachXO2280 devices have dedicated LVDS buffers.
2. These interfaces can be emulated with external resistors in all devices.
3. Top Banks of MachXO1200 and MachXO2280 devices only.
相关PDF资料
PDF描述
LCMXO1200C-4B256C
LCMXO1200C-5M132C
LCMXO1200E-3B256I
LCMXO1200C-3M132I
LCMXO640C-5B256C
相关代理商/技术参数
参数描述
LCMXO640C-3FTN256C 功能描述:CPLD - 复杂可编程逻辑器件 640 LUTs 159 IO 1.8/ 2.5/3.3V -3 Spd RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100
LCMXO640C-3FTN256I 功能描述:CPLD - 复杂可编程逻辑器件 640 LUTs 159 IO 1.8/ 2.5/3.3V -3 Spd I RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100
LCMXO640C-3M100C 功能描述:CPLD - 复杂可编程逻辑器件 640 LUTs 74 IO 1.8/2 .5/3.3V -3 Spd RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100
LCMXO640C-3M100I 功能描述:CPLD - 复杂可编程逻辑器件 640 LUTs 74 IO 1.8/2 .5/3.3V -3 Spd I RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100
LCMXO640C-3M132C 功能描述:CPLD - 复杂可编程逻辑器件 640 LUTs 101 IO 1.8/ 2.5/3.3V -3 Spd RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100