参数资料
型号: LM199H-SMD
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: 基准电压源/电流源
英文描述: 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 6.95 V, MBCY4
封装: METAL CAN, BCY-4
文件页数: 3/4页
文件大小: 14K
代理商: LM199H-SMD
MNLM199-X REV 0CL
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Vr
Reverse Breakdown
Voltage
0.5mA <= Ir <= 10mA
6.8
7.1
V
1, 2,
3
Delta Vr
Reverse Breakdown
Voltage Change
with Current
0.5mA <= Ir <= 10mA
9.0
mV
1, 2,
3
Vnrms
Zener Rms noise
Voltage
Ir = 1mA, Vh = 40V, 10Hz<Freq<10KHz
20.0
uV
1
Ihpk
Peak Heater
Current
Vh = 40V, 1 % Duty Cycle
200
mA
1
Il
Leakage Zener to
Substrate
Vh = 40V
250
nA
1
Delta Vz/
Delta T
Reverse Breakdown
Temperature
Coefficient
Ir = 1mA, -55 C <= TA <= 85 C
3
1
ppm/C 1
Ir = 1mA, 85 C <= TA <= 125 C
3
15
ppm/C 1
Zr
Reverse Dynamic
Impedance
Ir = 1mA
1
Ohm
1
Ih
Stabilized Heater
Current
Vh = 30V(tested after 5 seconds of
heater turn on time)
30
mA
1
Vh = 30V (Still air)
2
14
mA
2
285
mA
3
Vnpk
Zener Peak Noise
Voltage
Ir = 1mA, Vh = 40V, 10Hz<Freq<10KHz
80
uV
1
Vf
Forward Voltage
Ir = 1mA
-1.6
V
1
Note 1:
Guaranteed by "Reverse Breakdown Voltage Change with Current".
Note 2:
Guaranteed parameter, not tested.
Note 3:
Tested on Auto Drift test oven.
3
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