参数资料
型号: LM2735XMFEVAL
厂商: National Semiconductor
文件页数: 21/58页
文件大小: 0K
描述: BOARD DEMO FOR LM2735 SOT23-5
标准包装: 1
主要目的: DC/DC,步升
输出及类型: 1,非隔离
输出电压: 12V
电流 - 输出: 500mA
输入电压: 3 ~ 5.5 V
稳压器拓扑结构: 升压
频率 - 开关: 1.6MHz
板类型: 完全填充
已供物品: 板,文档
已用 IC / 零件: LM2735
' i
I
SNVS485F – JUNE 2007 – REVISED APRIL 2013
I sw ( t )
t
Figure 30. LM2735 Switch Current
Isw-rms = I IND D x 1 + 1
3
' i
I IND
2
| I IND
D
P IND = I IN2 x R IND-DCR
§ I ·
(small ripple approximation)
P COND-NFET = I IN2 x R DSON x D
2
P COND - NFET = ¨ O ? x R DSON x D
? D ' 1
(28)
(29)
(30)
The value for should be equal to the resistance at the junction temperature you wish to analyze. As an example,
at 125°C and V IN = 5V, R DSON = 250 m ? (See typical graphs for value).
Switching losses are also associated with the internal NMOS switch. They occur during the switch on and off
transition periods, where voltages and currents overlap resulting in power loss.
The simplest means to determine this loss is to empirically measuring the rise and fall times (10% to 90%) of the
switch at the switch node:
P SWR = 1/2(V OUT x I IN x F SW x T RISE )
P SWF = 1/2(V OUT x I IN x F SW x T FALL )
P SW = P SWR + P SWF
(31)
(32)
(33)
Copyright ? 2007–2013, Texas Instruments Incorporated
Product Folder Links: LM2735
21
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