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| 型号： | LM3445TRIACEVAL |
| 厂商： | National Semiconductor |
| 文件页数： | 4/40页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL LM3445MM |
| 标准包装： | 1 |
| 系列： | PowerWise® |
| 电流 - 输出 / 通道： | 770mA |
| 输出及类型： | 1，非隔离 |
| 特点： | 可调光 |
| 输入电压： | 8 ~ 12V |
| 已供物品： | 板 |
| 已用 IC / 零件： | LM3445MM |
| 相关产品： | LM3445MMX-ND - IC LED DRIVER TRIAC DIMM 10-MSOP LM3445MMDKR-ND - IC LED DRIVER TRIAC DIMM 10-MSOP LM3445MMCT-ND - IC LED DRIVER TRIAC DIMM 10-MSOP LM3445MMTR-ND - IC LED DRIVER TRIAC DIMM 10-MSOP |
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SNVS570L – JANUARY 2009 – REVISED MAY 2013
ELECTRICAL CHARACTERISTICS (continued)
Limits in standard type face are for T J = 25°C and those with boldface type apply over the full Operating Temperature
Range ( T J = ? 40°C to +125°C). Minimum and Maximum limits are specified through test, design, or statistical correlation.
Typical values represent the most likely parametric norm at T J = +25oC, and are provided for reference purposes only.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
INTERNAL PWM RAMP
f RAMP
Frequency
5.85
kHz
V RAMP
D RAMP
Valley voltage
Peak voltage
Maximum duty cycle
0.96
2.85
96.5
1.00
3.00
98.0
1.04
3.08
V
%
DIM DECODER
t ANG_DET
Angle detect rising threshold
Observed on BLDR pin
6.79
7.21
7.81
V
V ASNS
ASNS filter delay
4
μs
ASNS VMAX
3.85
4.00
4.15
V
I ASNS
ASNS drive capability sink
ASNS drive capability source
DIM low sink current
DIM High source current
V ASNS = 2V
V ASNS = 2V
V DIM = 1V
V DIM = 4V
1.65
7.6
-4.3
2.80
-4.00
-3.00
mA
V DIM
DIM low voltage
PWM input voltage
0.9
1.33
V
threshold
DIM high voltage
2.33
3.15
V TSTH
R DIM
Tri-state threshold voltage
DIM comparator tri-state impedance
Apply to FLTR1 pin
10
4.87
5.25
V
M ?
CURRENT SENSE COMPARATOR
V FLTR2
R FLTR2
V OS
FLTR2 open circuit voltage
FLTR2 impedance
Current sense comparator offset voltage
720
-4.0
750
420
0.1
780
4.0
mV
k ?
mV
GATE DRIVE OUTPUT
V DRVH
GATE high saturation
I GATE = 50 mA
0.24
0.50
V
V DRVL
I DRV
t DV
GATE low saturation
Peak souce current
Peak sink current
Rise time
Fall time
I GATE = 100 mA
GATE = V CC /2
GATE = V CC /2
C load = 1 nF
C load = 1 nF
0.22
-0.77
0.88
15
15
0.50
A
ns
THERMAL SHUTDOWN
T SD
Thermal shutdown temperature
See
(1)
165
°C
Thermal shutdown hysteresis
THERMAL SHUTDOWN
20
R θ JA
VSSOP-10 junction to ambient
121
°C/W
(1)
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design. In applications where high power dissipation
and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient
temperature (T A-MAX ) is dependent on the maximum operating junction temperature (T J-MAX-OP = 125°C), the maximum power dissipation
of the device in the application (P D-MAX ), and the junction-to ambient thermal resistance of the part/package in the application (R θ JA ), as
given by the following equation: T A-MAX = T J-MAX-OP – (R θ JA × P D-MAX ).
4
Product Folder Links: LM3445
Copyright ? 2009–2013, Texas Instruments Incorporated
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