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参数资料
型号： LM5010AMHE
厂商： NATIONAL SEMICONDUCTOR CORP
元件分类： 稳压器
英文描述： 1.5 A SWITCHING REGULATOR, 1000 kHz SWITCHING FREQ-MAX, PDSO14
封装： TSSOP-14
文件页数： 13/18页
文件大小： 406K
代理商： LM5010AMHE
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VIN to RTN
-0.3V to 76V
BST to RTN
-0.3V to 90V
SW to RTN (Steady State)
-1.5V
BST to VCC
76V
BST to SW
14V
VCC to RTN
-0.3V to 14V
SGND to RTN
-0.3V to +0.3V
SS to RTN
-0.3V to 4V
VIN to SW
76V
All Other Inputs to RTN
-0.3V to 7V
ESD Rating (Note 2)
Human Body Model
2kV
Storage Temperature Range
-65°C to +150°C
Lead Temperature (Soldering 4 sec) (Note 4)
260°C
Operating Ratings (Note 1)
VIN Voltage
6.0V to 75V
Junction Temperature
LM5010A/LM5010AQ1
40°C to + 125°C
LM5010AQ0
40°C to + 150°C
Electrical Charateristics Specifications with standard type are for T
J = 25°C only; limits in boldface type apply
over the full Operating Junction Temperature (T
J) range. Minimum and Maximum limits are guaranteed through test, design, or
statistical correlation. Typical values represent the most likely parametric norm at T
J = 25°C, and are provided for reference
purposes only. Unless otherwise stated the following conditions apply: V
IN = 48V, RON = 200k. See (Note 5).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
CC Regulator
V
CCReg
V
CC regulated output
6.6
7
7.4
Volts
V
IN - VCC
I
CC = 0 mA, FS < 200 kHz, 6.0V ≤ VIN ≤ 8.5V
100
mV
V
CC Bypass Threshold
V
IN Increasing
8.9
V
CC Bypass Hysteresis
V
IN Decreasing
260
mV
V
CC output impedance
(0 mA
≤ I
CC ≤ 5 mA)
V
IN = 6.0V
55
V
IN = 8.0V
50
V
IN = 48V
0.21
V
CC current limit (Note 3)
V
IN = 48V, VCC = 0V
15
mA
UVLOVcc
V
CC under-voltage lock-out
threshold
V
CC Increasing
5.25
V
UVLO
VCC hysteresis
V
CC Decreasing
180
mV
UVLO
VCC filter delay
100 mV overdrive
3
s
I
IN operating current
Non-switching, FB = 3V
675
950
A
I
IN shutdown current
RON/SD = 0V
100
200
A
Switch Characteristics
R
DS(on)
Buck Switch R
DS(on) @ ISW = 200
mA
T
J ≤ 125°C
T
J ≤ 150°C
0.35
0.80
0.85
UVLO
GD
Gate Drive UVLO
V
BST - VSW Increasing
1.7
3.0
4.0
V
UVLO
GD hysteresis
400
mV
SOFT-START Pin
I
SS
Internal current source
8.0
11.5
15
A
Current Limit
I
LIM
Threshold
Current out of I
SEN
1
1.25
1.5
A
Resistance from ISEN to SGND
130
m
Response time
150
ns
On Timer, RON/SD Pin
t
ON - 1
On-time
V
IN = 10V, RON = 200 k
2.1
2.75
3.4
s
t
ON - 2
On-time
V
IN = 75V, RON = 200 k
290
390
496
ns
Shutdown threshold
Voltage at RON/SD rising
0.30
0.7
1.05
V
Threshold hysteresis
40
mV
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4
LM5010A/LM5010AQ
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