参数资料
型号: LM5051MA/NOPB
厂商: National Semiconductor
文件页数: 9/23页
文件大小: 0K
描述: IC ORING FET CTRLR 8SOIC
标准包装: 95
应用: 冗余电源
FET 型: N 沟道
输出数: 1
内部开关:
电源电压: 36 V ~ 100 V
电流 - 电源: 400µA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
SNVS702D – OCTOBER 2011 – REVISED MARCH 2013
Typical Performance Characteristics (continued)
Unless otherwise stated: All conditions and measurements are referenced to device pin 7 (INP/VSS), V LINE = 48V, V OFF =
0.0V, V INN = -150 mV, C VCC = 0.1 μF, C GATE = 47 nF, and T J = 25°C
I GATE Charge Current
vs
V LINE , V GATE = 0.0V
V GATE
vs
V LINE
1.4
1.2
-40°C
+25°C
+125°C
15
14
-40°C
+25°C
+125°C
13
1.0
0.8
0.6
0.4
0.2
0.0
12
11
10
9
8
7
6
5
20
30
40
50 60 70
80
90 100
20
30
40
50 60 70
80
90 100
VLINE(V)
Figure 20.
nFGD VOL
vs
Temperature
VLINE(V)
Figure 21.
V SD(REV) Thresholds
vs
Temperature
0.5
1 mA
40
Vsd(rev) + ? Vsd(rev)
Vsd(rev)
20
0.4
0
0.3
0.2
-20
-40
-60
0.1
-80
0.0
-100
-50
-25
0 25 50 75
100 125
-50
-25
0 25 50 75
100 125
TEMPERATURE (°C)
Figure 22.
I INN
vs
TEMPERATURE (°C)
Figure 23.
V GATE
vs
V INN
V OFF
, V INN = -100mV
0.4
0.2
0.0
+25°C
+125°C
15
13
11
-0.2
9
VGATE
7
-0.4
-0.6
5
3
VOFF
-0.8
-1.0
1
-1
-1.0
-0.8
-0.6 -0.4
-0.2
0.0
-2
-1
0 1
2
3
VINN(V)
Figure 24.
TIME ( s)
Figure 25.
Copyright ? 2011–2013, Texas Instruments Incorporated
Product Folder Links: LM5051
9
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