参数资料
型号: LM89-1EVAL
厂商: National Semiconductor
文件页数: 4/32页
文件大小: 0K
描述: BOARD EVALUATION LM89-1
标准包装: 1
传感器类型: 温度
传感范围: 0°C ~ 125°C
接口: SMBus(2 线/I²C)
灵敏度: ±1°C
电源电压: 3 V ~ 3.6 V
嵌入式:
已供物品: 板,CD
已用 IC / 零件: LM89-1
相关产品: LM89-1CIMX-ND - IC TEMP SENSOR DGTL 8-SOIC
LM89-1CIMM/NOPBTR-ND - IC TEMP SENSOR DGTL 8-MSOP
LM89-1CIMMX/NOPBTR-ND - IC TEMP SENSOR DGTL 8-MSOP
LM89-1CIM-ND - IC TEMP SENSOR DGTL 8-SOIC

SNIS128C – AUGUST 2002 – REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1)
Supply Voltage
Voltage at SMBData, SMBCLK, ALERT, T_CRIT_A
Voltage at Other Pins
D ? Input Current
Input Current at All Other Pins (2)
Package Input Current (2)
SMBData, ALERT, T_CRIT_A Output Sink Current
Storage Temperature
? 0.3 V to 6.0 V
? 0.5V to 6.0V
? 0.3 V to (V DD + 0.3 V)
±1 mA
±5 mA
30 mA
10 mA
? 65°C to +150°C
Soldering Information, Lead Temperature
SOIC or VSSOP Packages (3)
ESD Susceptibility (4)
Vapor Phase (60 seconds)
Infrared (15 seconds)
Human Body Model
Machine Model
215°C
220°C
2000 V
200 V
(1)
(2)
(3)
(4)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not
apply when operating the device beyond its rated operating conditions.
When the input voltage (V I ) at any pin exceeds the power supplies (V I < GND or V I > V DD ), the current at that pin should be limited to 5
mA. Parasitic components and or ESD protection circuitry are shown in Table 1 and Figure 1 for the LM89's pins. The nominal
breakdown voltage of D3 is 6.5 V. Care should be taken not to forward bias the parasitic diode, D1, present on pins: D+, D ? . Doing so
by more than 50 mV may corrupt a temperature measurements.
Visit www.ti.com/packaging for other recommendations and methods of soldering surface mount devices.
Human body model, 100pF discharged through a 1.5k Ω resistor. Machine model, 200pF discharged directly into each pin.
Table 1. ESD Protection
Pin Name
PIN
D1
D2
D3
D4
D5
D6
D7
R1
SNP
ESD
NO.
CLAMP
V DD
1
x
D+
2
x (1)
x
x
x
x
x
D ?
3
x
x
x
x
x
x
T_CRIT_A
ALERT
SMBData
SMBCLK
4
6
7
8
x
x
x
x
x
x
x
x
x
x
(1)
An “x” indicates that the diode exists.
V+
D1
D3
D4
D6
I/O
D2
ESD
R1
SNP
Clamp
D5
D7
GND
Figure 1. ESD Protection Input Structure
4
Product Folder Links: LM89
Copyright ? 2002–2013, Texas Instruments Incorporated
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