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| 型号： | LMH6618MK/NOPB |
| 厂商： | National Semiconductor |
| 文件页数： | 36/38页 |
| 文件大小： | 0K |
| 描述： | IC OP AMP SGL VF RRIO TSOT23-6 |
| 标准包装： | 1,000 |
| 系列： | PowerWise® |
| 放大器类型： | 电压反馈 |
| 电路数： | 1 |
| 输出类型： | 满摆幅 |
| 转换速率： | 57 V/µs |
| 增益带宽积： | 65MHz |
| -3db带宽： | 140MHz |
| 电流 - 输入偏压： | 1.5µA |
| 电压 - 输入偏移： | 100µV |
| 电流 - 电源： | 1.35mA |
| 电流 - 输出 / 通道： | 35mA |
| 电压 - 电源，单路/双路(±)： | 2.7 V ~ 11 V，±1.35 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | TSOT-23-6 |
| 包装： | 带卷 (TR) |
| 产品目录页面： | 1270 (CN2011-ZH PDF) |
| 配用： | 551600083-001-ND - BOARD FOR SOT23 LMH6611/18 |
| 其它名称： | LMH6618MK LMH6618MK-ND LMH6618MKTR |
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SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012
±5V ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are guaranteed for TJ = +25°C, V
+ = 5V, V = 5V, DISABLE = 5V, V
CM = VO = 0V, AV =
+1 (RF = 0), otherwise RF = 2 k for AV ≠ +1, RL = 1 k || 5 pF. Boldface Limits apply at temperature extremes.
Symbol
Parameter
Condition
Min
Typ
Max
Units
(1)
(2)
(1)
Frequency Domain Response
SSBW
–3 dB Bandwidth Small Signal
AV = 1, RL = 1 k, VOUT = 0.2 VPP
140
MHz
AV = 2, 1, RL = 1 k, VOUT = 0.2 VPP
53
GBW
Gain Bandwidth (LMH6618)
AV = 10, RF = 2 k, RG = 221,
54
65
MHz
RL = 1 k, VOUT = 0.2 VPP
GBW
Gain Bandwidth (LMH6619)
AV = 10, RF = 2 k, RG = 221,
54
58
MHz
RL = 1 k, VOUT = 0.2 VPP
LSBW
3 dB Bandwidth Large Signal
AV = 1, RL = 1 k, VOUT = 2 VPP
16
MHz
AV = 2, RL = 150, VOUT = 2 VPP
15
Peak
Peaking
AV = 1, CL = 5 pF
0.05
dB
0.1
0.1 dB Bandwidth
AV = 2, VOUT = 0.5 VPP,
15
MHz
dBBW
RF = RG = 1.21 k
DG
Differential Gain
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
0.1
%
RL = 150 to V
+/2
DP
Differential Phase
AV = +2, 4.43 MHz, 0.6V < VOUT < 2V,
0.1
deg
RL = 150 to V
+/2
Time Domain Response
tr/tf
Rise & Fall Time
2V Step, AV = 1
30
ns
SR
Slew Rate
2V Step, AV = 1
45
57
V/
μs
ts_0.1
0.1% Settling Time
2V Step, AV = 1
90
ns
ts_0.01
0.01% Settling Time
2V Step, AV = 1
120
Noise and Distortion Performance
SFDR
Spurious Free Dynamic Range
fC = 100 kHz, VOUT = 2 VPP, RL = 1 k
100
fC = 1 MHz, VOUT = 2 VPP, RL = 1 k
88
dBc
fC = 5 MHz, VOUT = 2 VPP, RL = 1 k
70
en
Input Voltage Noise Density
f = 100 kHz
10
nV/
√Hz
in
Input Current Noise Density
f = 100 kHz
1
pA/
√Hz
CT
Crosstalk (LMH6619)
f = 5 MHz, VIN = 2 VPP
80
dB
Input DC Performance
VOS
Input Offset Voltage
VCM = 4.5V (pnp active)
0.1
±0.75
mV
VCM = 4.5V (npn active)
±1.3
TCVOS
Input Offset Voltage Temperature Drift
(3)
0.9
V/°C
IB
Input Bias Current
VCM = 4.5V (pnp active)
1.5
2.4
μA
VCM = 4.5V (npn active)
+1.0
+1.9
IOS
Input Offset Current
0.01
±0.26
μA
CIN
Input Capacitance
1.5
pF
RIN
Input Resistance
8
M
CMVR
Common Mode Voltage Range
DC, CMRR
≥ 65 dB
5.2
V
CMRR
Common Mode Rejection Ratio
VCM Stepped from 5.1V to 3.4V
84
100
dB
VCM Stepped from 4.0V to 5.1V
83
108
AOL
Open Loop Voltage Gain
RL = 1 k to +4.6V or 4.6V
86
95
dB
RL = 150 to +4.3V or 4.3V
79
84
(1)
Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the
Statistical Quality Control (SQC) method.
(2)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
(3)
Voltage average drift is determined by dividing the change in VOS by temperature change.
Copyright 2007–2012, Texas Instruments Incorporated
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LMH6618MKX | 制造商:NSC 制造商全称:National Semiconductor 功能描述:PowerWise㈢ 130 MHz, 1.25 mA RRIO Operational Amplifiers |
| LMH6618MKX/NOPB | 功能描述:运算放大器 - 运放 RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LMH6619MA | 制造商:Texas Instruments 功能描述:OP Amp Dual GP R-R I/O 11V 8-Pin SOIC N Rail 制造商:Texas Instruments 功能描述:OP AMP, DUAL, 130 MHZ, POWERWISE 制造商:Texas Instruments 功能描述:OP AMP, DUAL, 130 MHZ, POWERWISE; Op Amp Type:High Speed; No. of Amplifiers:2; Slew Rate:57V/s; Supply Voltage Range:2.7V to 11V; Amplifier Case Style:SOIC; No. of Pins:8; Bandwidth:58MHz; Operating Temperature Min:-40C; Operating ;RoHS Compliant: Yes 制造商:Texas Instruments 功能描述:1.25mA RRIO Op Amp, LMH6619MA |
| LMH6619MA/NOPB | 功能描述:运算放大器 - 运放 125 Mhz 1.35 Vfb RRIO Amp RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| LMH6619MAE | 制造商:Texas Instruments 功能描述:OP Amp Dual GP R-R I/O 11V 8-Pin SOIC N T/R |
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