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参数资料
| 型号： | LMV242LD |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 通信及网络 |
| 英文描述： | Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, DSO10 |
| 封装： | 3 X 3 MM, LLP-10 |
| 文件页数： | 3/16页 |
| 文件大小： | 560K |
| 代理商： | LMV242LD |
2.6V Electrical Characteristics
Unless otherwise specified, all limits are guaranteed to T
J
= 25C.
V
DD
= 2.6V.
Boldface
limits apply at temperature extremes (Note 4). (Continued)
Symbol
V
O
Parameter
Condition
Min
Typ
47
Max
90
115
90
115
Units
Output Swing from Rail
From Positive Rail, Sourcing,
I
O
= 7 mA
From Negative Rail Sinking,
I
O
= 7 mA
Sourcing, V
O
= 2.4V
Sinking, V
O.
= 0.2V
f
MEASURE
= 10 KHz,
RF Input = 1800 MHz, -10
dBm, 20 k
// 68 pF between
V
COMP1
and V
COMP2
, V
OUT
=1.4V, set by V
RAMP
, (Note 8)
mV
52
I
O
Output Short Circuit Current
(Note 3)
10
10
29.5
27.1
700
mA
e
n
Output Referred Noise
nV/
SR
Slew Rate
2.1
4.4
V/μs
5.0V Electrical Characteristics
V
DD
= 5.0V.
Boldface
limits apply at temperature extremes (Note 4).
Unless otherwise specified, all limits are guaranteed to T
J
= 25C.
Symbol
I
DD
Parameter
Condition
Min
Typ
7.8
Max
12
15
30
Units
mA
Supply Current
V
OUT
= (V
DD
- GND)/2
In Shutdown (TX_EN = 0V)
V
OUT
= (V
DD
- GND)/2
(Note 7)
(Note 7)
0.4
μA
V
HIGH
V
LOW
T
ON
I
EN
, I
BS
RAMP Amplifier
V
RD
1/R
RAMP
I
OUT RAMP
RF Input
P
IN
Logic Level to Enable Power
Logic Level to Disable Power
Turn-on-Time from Shutdown
Current into TX_EN and BS Pin
1.8
V
V
μs
μA
0.8
6
5
1.5
0.03
V
RAMP
Deadband
Transconductance
Ramp Amplifier Output Current
155
70
100
206
96
168
265
120
mV
μA/V
μA
(Note 8)
V
RAMP
= 2V
RF Input Power Range
(Note 5)
20 k
// 68 pF between
V
COMP1
and V
COMP2
50
0
63
13
1.79
dBm
dBV
Logarithmic Slope
(Note 9)
@
900 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
@
1800 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
@
1900 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
@
2000 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
@
900 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
@
1800 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
@
1900 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
@
2000 MHz, 20 k
// 68 pF
between V
COMP1
and V
COMP2
(Note 8)
μA/dB
–1.69
1.67
–1.65
Logarithmic Intercept
(Note 9)
–50.2
dBm
–52.5
–52.5
–52.9
R
IN
DC Resistance
55.7
L
www.national.com
3
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相关代理商/技术参数 |
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| LMV242LD/NOPB | 功能描述:射频检测器 RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 频率范围:650 MHz to 3 GHz 最大二极管电容: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:SC-88 封装:Reel |
| LMV242LDX | 功能描述:射频检测器 RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 频率范围:650 MHz to 3 GHz 最大二极管电容: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:SC-88 封装:Reel |
| LMV242LDX/NOPB | 功能描述:射频检测器 RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 频率范围:650 MHz to 3 GHz 最大二极管电容: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:SC-88 封装:Reel |
| LMV242MDA | 制造商:NSC 制造商全称:National Semiconductor 功能描述:Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller |
| LMV242MEA DIE | 制造商:Texas Instruments 功能描述: |
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