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参数资料
| 型号： | LMX2335USLBX |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | XO, clock |
| 英文描述： | PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications |
| 中文描述： | PLL FREQUENCY SYNTHESIZER, 1200 MHz, PQCC16 |
| 封装： | PLASTIC, CSP-16 |
| 文件页数： | 8/48页 |
| 文件大小： | 3127K |
| 代理商： | LMX2335USLBX |
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Absolute Maximum Ratings
(Notes 1,
2, 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
to GND
V
P
RF1 to GND
V
P
RF2 to GND
Voltage on any pin to GND (V
I
)
V
I
must be
<
+6.5V
Storage Temperature Range (T
S
)
Lead Temperature (solder 4 s) (T
L
)
16-Pin TSSOP
θ
JA
Thermal
Impedance
20-Pin TSSOP
θ
JA
Thermal
Impedance
0.3V to +6.5V
0.3V to +6.5V
0.3V to +6.5V
0.3V to V
CC
+0.3V
65C to +150C
+260C
137.1C/W
114.5C/W
16-Pin CSP
θ
JA
Thermal Impedance
24-Pin CSP
θ
JA
Thermal Impedance
130C/W
112C/W
Recommended Operating
Conditions
(Note 1)
Power Supply Voltage
V
CC
to GND
V
P
RF1 to GND
V
P
RF2 to GND
Operating Temperature (T
A
)
+2.7V to +5.5V
V
CC
to +5.5V
V
CC
to +5.5V
40C to +85C
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2:
This device is a high performance RF integrated circuit with an ESD
rating
<
2 kV and is ESD sensitive. Handling and assembly of this device
should only be done at ESD protected work stations.
Note 3:
GND = 0V
Electrical Characteristics
V
CC
= V
P
RF1 = V
P
RF2 = 3.0V, 40C
≤
T
A
≤
+85C, unless otherwise specified
Symbol
Parameter
Conditions
Value
Typ
Units
Min
Max
I
CC
PARAMETERS
I
CC
RF1 + RF2
Power Supply
Current, RF1 + RF2
Synthesizers
LMX2335U
Clock, Data and LE = GND
OSC
in
= GND
PWDN RF1 Bit = 0
PWDN RF2 Bit = 0
Clock, Data and LE = GND
OSC
in
= GND
PWDN RF1 Bit = 0
PWDN RF2 Bit = 1
Clock, Data and LE = GND
OSC
in
= GND
PWDN RF1 Bit = 1
PWDN RF2 Bit = 0
Clock, Data and LE = GND
OSC
in
= GND
PWDN RF1 Bit = 1
PWDN RF2 Bit = 1
3.0
4.0
mA
LMX2336U
3.5
4.5
mA
I
CC
RF1
Power Supply
Current, RF1
Synthesizer Only
LMX2335U
1.5
2.0
mA
LMX2336U
2.0
2.5
mA
I
CC
RF2
Power Supply
Current, RF2
Synthesizer Only
LMX2335U
1.5
2.0
mA
LMX2336U
1.5
2.0
I
CC-PWDN
Powerdown Current
LMX2335U/
1.0
10.0
μA
LMX2336U
RF1 SYNTHESIZER PARAMETERS
f
IN
RF1
RF1 Operating
Frequency
LMX2335U
LMX2336U
100
200
192
1200
2000
131135
MHz
MHz
N
RF1
RF1 N Divider Range
Prescaler = 64/65
(Note 4)
Prescaler = 128/129
(Note 4)
384
262143
R
RF1
F
φ
RF1
Pf
IN
RF1
RF1 R Divider Range
RF1 Phase Detector Frequency
RF1 Input Sensitivity
3
32767
10
0
MHz
dBm
2.7V
≤
V
CC
≤
3.0V
(Note 5)
3.0V
<
V
CC
≤
5.5V
(Note 5)
15
10
0
dBm
L
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相关代理商/技术参数 |
参数描述 |
|---|---|
| LMX2335UTM | 制造商:NSC 制造商全称:National Semiconductor 功能描述:PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications |
| LMX2335UTM/NOPB | 功能描述:IC FREQ SYNTHESIZER DUAL 16TSSOP RoHS:是 类别:集成电路 (IC) >> 时钟/计时 - 时钟发生器，PLL，频率合成器 系列:PLLatinum™ 标准包装:39 系列:- 类型:* PLL:带旁路 输入:时钟 输出:时钟 电路数:1 比率 - 输入:输出:1:10 差分 - 输入:输出:是/是 频率 - 最大:170MHz 除法器/乘法器:无/无 电源电压:2.375 V ~ 3.465 V 工作温度:0°C ~ 70°C 安装类型:* 封装/外壳:* 供应商设备封装:* 包装:* |
| LMX2335UTMX | 制造商:NSC 制造商全称:National Semiconductor 功能描述:PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications |
| LMX2336 | 制造商:NSC 制造商全称:National Semiconductor 功能描述:PLLatinum⑩ Dual Frequency Synthesizer for RF Personal Communications |
| LMX2336 WAF | 制造商:Texas Instruments 功能描述: |
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