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| 型号： | LT1169CS8#TRPBF |
| 厂商： | Linear Technology |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP JFET LONOISE DUAL 8SOIC |
| 标准包装： | 2,500 |
| 放大器类型： | J-FET |
| 电路数： | 2 |
| 转换速率： | 4.2 V/µs |
| 增益带宽积： | 5.3MHz |
| 电流 - 输入偏压： | 4pA |
| 电压 - 输入偏移： | 600µV |
| 电流 - 电源： | 5.3mA |
| 电压 - 电源，单路/双路(±)： | ±4.5 V ~ 20 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
1
LT1169
Dual Low Noise,
Picoampere Bias Current,
JFET Input Op Amp
D
U
ESCRIPTIO
S
FEATURE
The LT1169 achieves a new standard of excellence in noise
performance for a dual JFET op amp. For the first time low
voltage noise (6nV/
√Hz) is simultaneously offered with
extremely low current noise (1fA/
√Hz), providing the low-
est total noise for high impedance transducer applications.
Unlike most JFET op amps, the very low input bias current
(5pA Typ) is maintained over the entire common mode
range which results in an extremely high input resistance
(1013
). When combined with a very low input capaci-
tance (1.5pF) an extremely high input impedance results,
making the LT1169 the first choice for amplifying low level
signals from high impedance transducers. The low input
capacitance also assures high gain linearity when buffering
AC signals from high impedance transducers.
The LT1169 is unconditionally stable for gains of 1 or more,
even with 1000pF capacitive loads. Other key features are
0.6mV VOS and a voltage gain over 4 million. Each indi-
vidual amplifier is 100% tested for voltage noise, slew rate
(4.2V/
s), and gain-bandwidth product (5.3MHz).
The LT1169 is offered in the S8 and N8 packages.
A full set of matching specifications are provided for
precision instrumentation amplifier front ends. Specifica-
tions at
±5V supply operation are also provided. For an
even lower voltage noise please see the LT1113 data sheet.
s
Input Bias Current, Warmed Up: 20pA Max
s
100% Tested Low Voltage Noise: 8nV/
√Hz Max
s
S8 and N8 Package Standard Pinout
s
Very Low Input Capacitance: 1.5pF
s
Voltage Gain: 1.2 Million Min
s
Offset Voltage: 2mV Max
s
Input Resistance: 1013
s
Gain-Bandwidth Product: 5.3MHz Typ
s
Guaranteed Specifications with
±5V Supplies
s
Guaranteed Matching Specifications
U
S
A
O
PPLICATI
s
Photocurrent Amplifiers
s
Hydrophone Amplifiers
s
High Sensitivity Piezoelectric Accelerometers
s
Low Voltage and Current Noise Instrumentation
Amplifier Front Ends
s
Two and Three Op Amp Instrumentation Amplifiers
s
Active Filters
U
A
O
PPLICATI
TYPICAL
, LTC and LT are registered trademarks of Linear Technology Corporation.
Low Noise Light Sensor with DC Servo
8
+V
–V
4
LT1169 TA01
R1
1M
C1
2pF
7
5
6
–
+
1/2 LT1169
R2C2 > C1R1
CD = PARASITIC PHOTODIODE CAPACITANCE
VOUT = 100mV/WATT FOR 200nm WAVE LENGTH
330mV/
WATT FOR 633nm WAVE LENGTH
R5
10k
D2
1N914
V–
R4
1k
D1
1N914
R3
1k
1
3
2 –
+
1/2 LT1169
C2
0.022
F
HAMAMATSU
S1336-5BK
(908) 231-0960
VOUT
R2
100k
CD
2N3904
SOURCE RESISTANCE (
)
10k
1k
100
10
1
100
10k
100k
1M
1k
10M
LT1169 TA02
TOTAL
1kHz
VOLTAGE
NOISE
DENSITY
(nV/
√
Hz)
100M 1G
–
+
VN
RSOURCE
TA = 25°C
VS = ±15V
VN
SOURCE
RESISTANCE
ONLY
VN =
√(V
OP AMP)
2 + 4kTRS + 2qIBRS2
1kHz Output Voltage Noise
Density vs Source Resistance
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