参数资料
型号: LT1206CS8#TR
厂商: Linear Technology
文件页数: 4/18页
文件大小: 0K
描述: IC AMP CURR FEEDBACK 250MA 8SOIC
标准包装: 2,500
放大器类型: 电流反馈
电路数: 1
转换速率: 900 V/µs
-3db带宽: 60MHz
电流 - 输入偏压: 10µA
电压 - 输入偏移: 3000µV
电流 - 电源: 20mA
电流 - 输出 / 通道: 1.2A
电压 - 电源,单路/双路(±): 10 V ~ 30 V,±5 V ~ 15 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
LT1206
12
1206fb
applicaTions inForMaTion
power plane layer either inside or on the opposite side of
the board. Although the actual thermal resistance of the
PCB material is high, the length/area ratio of the thermal
resistancebetweenthelayerissmall.Copperboardstiffen-
ers and plated through holes can also be used to spread
the heat generated by the device.
Tables 1 and 2 list thermal resistance for each package.
For the TO-220 package, thermal resistance is given for
junction-to-caseonlysincethispackageisusuallymounted
to a heat sink. Measured values of thermal resistance for
several different board sizes and copper areas are listed
for each surface mount package. All measurements were
taken in still air on 3/32" FR-4 board with 1oz copper. This
datacanbeusedasaroughguidelineinestimatingthermal
resistance.Thethermalresistanceforeachapplicationwill
beaffectedbythermalinteractionswithothercomponents
as well as board size and shape.
Table 1. R Package, 7-Lead DD
COPPER AREA
BOARD AREA
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)
TOPSIDE*
BACKSIDE
2500 sq. mm 2500 sq. mm 2500 sq. mm
25°C/W
1000 sq. mm 2500 sq. mm 2500 sq. mm
27°C/W
125 sq. mm 2500 sq. mm 2500 sq. mm
35°C/W
*Tab of device attached to topside copper.
Table 2. S8 Package, 8-Lead Plastic SO
COPPER AREA
BOARD AREA
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)
TOPSIDE*
BACKSIDE
2500 sq. mm 2500 sq. mm 2500 sq. mm
60°C/W
1000 sq. mm 2500 sq. mm 2500 sq. mm
62°C/W
225 sq. mm 2500 sq. mm 2500 sq. mm
65°C/W
100 sq. mm 2500 sq. mm 2500 sq. mm
69°C/W
100 sq. mm 1000 sq. mm 2500 sq. mm
73°C/W
100 sq. mm 225 sq. mm 2500 sq. mm
80°C/W
100 sq. mm 100 sq. mm 2500 sq. mm
83°C/W
*Pins 1 and 8 attached to topside copper.
Y Package, 7-Lead TO-220
Thermal Resistance (Junction-to-Case) = 5°C/W
N8 Package, 8-Lead DIP
Thermal Resistance (Junction-to-Ambient) = 100°C/W
Calculating Junction Temperature
The junction temperature can be calculated from the
equation:
TJ = (PD × θJA) + TA
where:
TJ = Junction Temperature
TA = Ambient Temperature
PD = Device Dissipation
θJA = Thermal Resistance (Junction-to Ambient)
As an example, calculate the junction temperature for the
circuit in Figure 7 for the N8, S8, and R packages assuming
a 70°C ambient temperature.
The device dissipation can be found by measuring the
supply currents, calculating the total dissipation, and
then subtracting the dissipation in the load and feedback
network.
PD = (39mA × 30V) – (12V)2/(2k||2k) = 1.03W
Then:
TJ = (1.03W × 100°C/W) + 70°C = 173°C
for the N8 package.
TJ = (1.03W × 65°C/W) × + 70°C = 137°C
for the S8 with 225 sq. mm topside heat sinking.
TJ = (1.03W × 35°C/W) × + 70°C = 106°C
for the R package with 100 sq. mm topside heat
sinking.
Since the maximum junction temperature is 150°C, the
N8 package is clearly unacceptable. Both the S8 and R
packages are usable.
Figure 7. Thermal Calculation Example
+
15V
–15V
0.01F
2k
330
2k
300pF
–12V
12V
f = 2MHz
39mA
I
1206 F07
LT1206
S/D
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