参数资料
型号: LT3782IFE#TRPBF
厂商: Linear Technology
文件页数: 11/20页
文件大小: 0K
描述: IC REG CTRLR BST PWM CM 28-SSOP
标准包装: 2,000
PWM 型: 电流模式
输出数: 1
频率 - 最大: 533kHz
占空比: 94%
电源电压: 6 V ~ 40 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 28-SOIC(0.173",4.40mm 宽)裸露焊盘
包装: 带卷 (TR)
LT3782
APPLICATIONS INFORMATION
The Peak and Average Input Currents
And the inductance is estimated to be:
The control circuit in the LT3782 measures the input current
by using a sense resistor in each MOSFET source, so the
output current needs to be re?ected back to the input in
L =
V IN ? D
f s ? Δ I L
I IN(MAX) = O(MAX)
Δ I L ? V OUT
+ IN ? 70% ? OUT(MAX)
I SAT ≥
V IN(MIN)
I IN(PEAK) = 1.2 ? O(MAX)
R ≤ V SENSE(MAX) ?
1.2 ? O(MAX)
Δ I L ? 40% ?
= 20% ?
order to dimension the power MOSFET properly. Based
on the fact that, ideally, the output power is equal to the
input power, the maximum average input current is:
I
1– D MAX
The peak current is:
I
1– D MAX
The maximum duty cycle, D MAX , should be calculated at
minimum V IN .
Power Inductor Selection
In a boost circuit, a power inductor should be designed
to carry the maximum input DC current. The inductance
should be small enough to generate enough ripple current
to provide adequate signal to noise ratio to the LT3782.
An empirical starting of the inductor ripple current (per
phase) is about 40% of maximum DC current, which is
half of the input DC current in a 2-phase circuit:
I OUT(MAX) ? V OUT I OUT(MAX) ? V OUT
2V IN V IN
where V IN , V OUT and I OUT are the DC input voltage, output
voltage and output current, respectively.
where f s is the switching frequency per phase.
The saturation current level of inductor is estimated to
be:
I I
2 2
Sense Resistor Selection
During the switch on-time, the control circuit limits the
maximum voltage drop across the sense resistor to about
60mV. The peak inductor current is therefore limited to
60mV/R. The relationship between the maximum load
current, duty cycle and the sense resistor R SENSE is:
1– D MAX
I
2
Power MOSFET Selection
Important parameters for the power MOSFET include the
drain-to-source breakdown voltage (BV DSS ), the threshold
voltage (V GS(TH) ), the on-resistance (R DS(ON) ) versus gate-
to-source voltage, the gate-to-source and gate-to-drain
charges (Q GS and Q GD , respectively), the maximum drain
current (I D(MAX) ) and the MOSFET’s thermal resistances
(R TH(JC) and R TH(JA) ).
3782fg
11
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