参数资料
型号: LT3782IFE#TRPBF
厂商: Linear Technology
文件页数: 12/20页
文件大小: 0K
描述: IC REG CTRLR BST PWM CM 28-SSOP
标准包装: 2,000
PWM 型: 电流模式
输出数: 1
频率 - 最大: 533kHz
占空比: 94%
电源电压: 6 V ~ 40 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 28-SOIC(0.173",4.40mm 宽)裸露焊盘
包装: 带卷 (TR)
LT3782
APPLICATIONS INFORMATION
The gate drive voltage is set by the 10V GBIAS regulator.
Consequently, 10V rated MOSFETs are required in most
high voltage LT3782 applications.
Pay close attention to the BV DSS speci?cations for the
MOSFETs relative to the maximum actual switch voltage
voltage and temperature), and for the worst-case speci-
?cations for V SENSE(MAX) and the R DS(ON) of the MOSFET
listed in the manufacturer’s data sheet.
The power dissipated by the MOSFET in a 2-phase boost
converter is:
in the application. The switch node can ring during the
turn-off of the MOSFET due to layout parasitics. Check the
switching waveforms of the MOSFET directly across the
drain and source terminals using the actual PC board layout
(not just on a lab breadboard!) for excessive ringing.
P FET =
I O(MAX)
2
( 1– D )
2
? R DS(ON) ? D ?
I O(MAX)
T
Calculating Power MOSFET Switching and Conduction
Losses and Junction Temperatures
+ k ? V O2 ?
2
( 1– D )
? C RSS ? f
In order to calculate the junction temperature of the power
MOSFET, the power dissipated by the device must be known.
This power dissipation is a function of the duty cycle, the
load current and the junction temperature itself (due to
the positive temperature coef?cient of its R DS(ON) ). As a
result, some iterative calculation is normally required to
determine a reasonably accurate value. Care should be
taken to ensure that the converter is capable of delivering
the required load current over all operating conditions (line
2.0
1.5
1.0
0.5
The ?rst term in the equation above represents the I 2 R
losses in the device, and the second term, the switching
losses. The constant, k = 1.7, is an empirical factor inversely
related to the gate drive current and has the dimension
of 1/current. The ρ T term accounts for the temperature
coef?cient of the R DS(ON) of the MOSFET, which is typically
0.4%/°C. Figure 4 illustrates the variation of normalized
R DS(ON) over temperature for a typical power MOSFET.
0
–50
0
50
100
150
JUNCTION TEMPERATURE (°C)
3782 F06
Figure 4. Normalized R DS(ON) vs Temperature
3782fg
12
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